P-Channel MOSFET, 30 A, 60 V, 3-Pin DPAK Infineon SPD30P06PGBTMA1
- RS Stock No.:
- 8986864
- Mfr. Prt No.:
- SPD30P06PGBTMA1
- Brand:
- Infineon
Legislation and Compliance
RoHS Status: Exempt
Statement of Conformity
This statement confirms that the product detailed below complies with the specifications currently published in the RS media and has been subject to the strict quality conditions imposed by RS Components’ internal management systems. Furthermore and where applicable, it confirms that all relevant semiconductor devices have been handled and packed under conditions that meet the administrative and technical requirements of ANSI/ESD S20.20 and EN61340-5-1 electrostatics control standards.
| RS stock number | 8986864 |
| Product description | P-Channel MOSFET, 30 A, 60 V, 3-Pin DPAK Infineon SPD30P06PGBTMA1 |
| Manufacturer / Brand | Infineon |
| Manufacturer part number | SPD30P06PGBTMA1 |
The foregoing information relates to product sold on, or after, the date shown below.
RS COMPONENTS
| Date | Dec 26, 2024 |
RS Components Pte Ltd Robinson Road, P.O. Box 1582, Singapore 903132
Product Details
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant
Specifications
| Attribute | Value |
| Brand | Infineon |
| Maximum Power Dissipation | 125 W |
| Number of Elements per Chip | 1 |
| Series | SIPMOS |
| Minimum Operating Temperature | -55 °C |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Drain Source Resistance | 75 mΩ |
| Mounting Type | Surface Mount |
| Package Type | DPAK (TO-252) |
| Maximum Operating Temperature | +175 °C |
| Length | 6.73 mm |
| Typical Gate Charge @ Vgs | 32 nC @ 10 V |
| Channel Type | P |
| Height | 2.41 mm |
| Width | 6.22 mm |
| Channel Mode | Enhancement |
| Pin Count | 3 |
| Maximum Drain Source Voltage | 60 V |
| Transistor Material | Si |
| Maximum Continuous Drain Current | 30 A |
| Transistor Configuration | Single |
| Forward Diode Voltage | 1.7 V |
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