N-Channel MOSFET, 300 A, 100 V, 8-Pin HSOF Infineon IPT020N10N3ATMA1
- RS Stock No.:
- 9064356
- Mfr. Prt No.:
- IPT020N10N3ATMA1
- Brand:
- Infineon
Legislation and Compliance
RoHS Status: Not Applicable
Statement of Conformity
This statement confirms that the product detailed below complies with the specifications currently published in the RS media and has been subject to the strict quality conditions imposed by RS Components’ internal management systems. Furthermore and where applicable, it confirms that all relevant semiconductor devices have been handled and packed under conditions that meet the administrative and technical requirements of ANSI/ESD S20.20 and EN61340-5-1 electrostatics control standards.
| RS stock number | 9064356 |
| Product description | N-Channel MOSFET, 300 A, 100 V, 8-Pin HSOF Infineon IPT020N10N3ATMA1 |
| Manufacturer / Brand | Infineon |
| Manufacturer part number | IPT020N10N3ATMA1 |
The foregoing information relates to product sold on, or after, the date shown below.
RS COMPONENTS
| Date | Dec 26, 2024 |
RS Components Pte Ltd Robinson Road, P.O. Box 1582, Singapore 903132
Product Details
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Infineon OptiMOS™3 Power MOSFETs, 100V and over
Specifications
| Attribute | Value |
| Brand | Infineon |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Mounting Type | Surface Mount |
| Transistor Configuration | Single |
| Forward Diode Voltage | 1 V |
| Package Type | HSOF |
| Maximum Drain Source Resistance | 3.7 mΩ |
| Maximum Operating Temperature | +175 °C |
| Length | 10.58 mm |
| Typical Gate Charge @ Vgs | 156 nC @ 10 V |
| Channel Type | N |
| Height | 2.4 mm |
| Width | 10.1 mm |
| Channel Mode | Enhancement |
| Maximum Power Dissipation | 375 W |
| Number of Elements per Chip | 1 |
| Series | OptiMOS 3 |
| Minimum Operating Temperature | -55 °C |
| Pin Count | 8 |
| Maximum Drain Source Voltage | 100 V |
| Transistor Material | Si |
| Maximum Continuous Drain Current | 300 A |
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