STMicroelectronics Through Hole, 3-pin, TRIAC, 800V, Gate Trigger 1.3V 600V
Archives
Nexperia PUMD13,115 Dual NPN + PNP Digital Transistor, 100 mA, 50 V, 6-Pin SOT-363
Digital Transistors, Nexperia
Resistor-equipped bipolar transistors, also known as “Digital Transistors” or “Bias Resistor Transistors”, incorporating one or two integrated resistors. A single series input resistor, or a potential divider of two resistors, allows these devices to be directly driven from digital sources. Both single and dual transistor versions are available.
Dual Resistor Dual Digital Transistors, Nexperia
STMicroelectronics Panel Mount, 3-pin, TRIAC, 800V, Gate Trigger 1.3V 600V
TRIACs, STMicroelectronics
TRIAC, 25A to 40A, STMicroelectronics
STMicroelectronics Through Hole, 3-pin, TRIAC, 600V, Gate Trigger 1.3V 600V
TRIACs, STMicroelectronics
TRIAC, 8A to 12A, STMicroelectronics
Toshiba GT60J323(Q) IGBT, 60 A 600 V, 3-Pin TO-3PLH, Through Hole
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
IGBT Discretes, Toshiba
STMicroelectronics Panel Mount, 3-pin, TRIAC, 600V, Gate Trigger 1.3V 600V
TRIACs, STMicroelectronics
TRIAC, 25A to 40A, STMicroelectronics
STMicroelectronics STGF3NC120HD IGBT, 6 A 1200 V, 3-Pin TO-220FP, Through Hole
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
STMicroelectronics BTW68-1200RG, Thyristor 1200V, 19A 50mA
Thyristors – STMicroelectronics
STMicroelectronics produces a large range of Thyristors, also known as SCRs or Silicon Controlled Rectifiers, which are suitable for a host of power switching and control applications. Specialized types include sensitive gate thyristors and devices designed for capacitance discharge applications.
Thyristors, STMicroelectronics
A wide range of general purpose Thyristors from STMicroelectronics with blocking voltage ratings of 400 to 1200V and on-state current rating of up to 50A.
onsemi MJH11021G PNP Darlington Transistor, 15 A 250 V HFE:100, 3-Pin TO-247
PNP Darlington Transistors, ON Semiconductor
Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.