Thyristors – Semikron

A Thyristor is a solid-state semiconductor device with four layers of alternating N and P-type material. They act as bistable switches, conducting when their gate receives a current trigger, and continue to conduct while they are forward biased. Thyristors are synonymous to Silicon-Controlled Rectifier (SCR).
Encapsulated modules with electrically isolated base plate. Suitable for applications such as battery chargers, welders and plating equipment, regulated power supplies and temperature and speed control circuits.

Dual Thyristor Modules, SKKT SEMIPACK 1 Series, Semikron

APPROVALS : UL recognised component

Dual series thyristors

LED Drivers, Diodes Inc

Linear LED Drivers, Diodes Inc

The Linear LED Drivers provide a simple and effective solution to driving low-current, high-brightness LEDs.

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Discrete IGBTs, 1000V and over, Fairchild Semiconductor

Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

NPN Darlington Transistors, ON Semiconductor

Bipolar Transistors, STMicroelectronics

A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.

TIP122 Darlington Transistors

STMicroelectronics presents its TIP122 range of Darlington pairs. Darlington pairs or transistors are a package of two standard BJT transistors that are used to amplify weak signals from one circuit to another circuit or microprocessor.

The TIP122 devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.

Features and Benefits

• Low collector-emitter saturation voltage

• Complementary NPN -PNP transistors

Applications

• General purpose linear and switching

Bipolar Transistors, STMicroelectronics

A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.

PNP Darlington Transistors, STMicroelectronics

Darlington Transistor Drivers

Darlington Transistor Arrays, Texas Instruments

A range of Darlington transistor arrays from Texas Instruments suitable for a wide range of medium to high current driver applications.

Darlington Transistor Drivers

Darlington Transistor Arrays, Texas Instruments

A range of Darlington transistor arrays from Texas Instruments suitable for a wide range of medium to high current driver applications.