STMicroelectronics Switching Diode, 2A 600V, 2-Pin DO-41 STTH2R06
Archives
STMicroelectronics BDX34C PNP Darlington Transistor, 10 A 100 V HFE:750, 3-Pin TO-220
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
PNP Darlington Transistors, STMicroelectronics
STMicroelectronics Through Hole, 3-pin, TRIAC, 600V, Gate Trigger 1.3V 600V
TRIACs, STMicroelectronics
TRIAC, 25A to 40A, STMicroelectronics
onsemi FGH60N60SFDTU IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Discrete IGBTs, Fairchild Semiconductor
DiodesZetex BCR421UW6Q-7 Constant Current Diode, 10mA, 6-Pin SOT-26
LED Drivers, Diodes Inc
Linear LED Drivers, Diodes Inc
The Linear LED Drivers provide a simple and effective solution to driving low-current, high-brightness LEDs.
Texas Instruments LM334M/NOPB Constant Current Diode, 10mA, 8-Pin SOIC
Current Source, Texas Instruments
Adjustable Current Source, Texas Instruments
LM134/LM334 – Adjustable Current Source
LM234 – Temperature Sensor with Analogue Current Source Output
REF200 – Dual high-accuracy 100μA fixed Current Source IC with additional current mirror
STMicroelectronics Through Hole, 3-pin, TRIAC, 600V, Gate Trigger 1.3V 600V
TRIAC, 25A to 40A, STMicroelectronics
TRIACs, STMicroelectronics
Vishay Dual Switching Diode, Series, 150mA 100V, 3-Pin SOT-23 BAV99-E3-08
Diodes and Rectifiers, Vishay Semiconductor
Glass Passivated Junction Fast Switching Plastic Rectifier
Features
• Superectifier structure for high reliability condition
• Cavity-free glass-passivated junction
• Fast switching for high efficiency
• Low leakage current, typical IR less than 0.2 μA
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
Typical Applications
High voltage rectification of G2 grid CRT and TV, snubber
circuit of camera flash.
Mechanical Data
Case: DO-204AL, molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 – RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
STMicroelectronics ULN2074B Quad NPN Darlington Transistor, 1.75 A 50 V, 16-Pin PDIP
Darlington Transistor Drivers
Darlington Transistor Arrays, STMicroelectronics
Darlington transistor power drivers are high-voltage, high-current switch arrays containing multiple open-collector Darlington pairs and integral suppression diodes for inductive loads. The high current rating of each output is 500 mA or higher. The inputs are pinned opposite the outputs in the IC package to simplify the application board layout. The interface is standard logic level for TTL or CMOS.
STMicroelectronics ULN2068B Quad NPN Darlington Transistor, 1.75 A 50 V, 16-Pin PDIP
Darlington Transistor Drivers
Darlington Transistor Arrays, STMicroelectronics
Darlington transistor power drivers are high-voltage, high-current switch arrays containing multiple open-collector Darlington pairs and integral suppression diodes for inductive loads. The high current rating of each output is 500 mA or higher. The inputs are pinned opposite the outputs in the IC package to simplify the application board layout. The interface is standard logic level for TTL or CMOS.