IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Dual IGBT Modules

A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.

Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology

Single IGBT Modules

SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS, SEMiX and SEMITOP packages in different topologies, current and voltage ratings.

IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

TRIACs, STMicroelectronics

Over-Voltage Protected AC Switch, ACS™ Series, STMicroelectronics

The ACS™ Series are static-switch semiconductors for Alternating Current (AC). They are simple-to-drive, sensitive-gate devices with highly inductive load switch-off capability. They are over-voltage protected.

TRIACs, STMicroelectronics

TRIAC, 16A to 20A, STMicroelectronics

TRIAC, 16A to 20A, STMicroelectronics

TRIACs, STMicroelectronics

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Relay and Inductive Load Drivers

Power Drivers, Allegro Microsystems

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Discrete IGBTs, 1000V and over, Fairchild Semiconductor

Thyristors – IXYS

A Thyristor is a solid-state semiconductor device with four layers of alternating N and P-type material. They act as bistable switches, conducting when their gate receives a current trigger, and continue to conduct while they are forward biased. Thyristors are synonymous to Silicon-Controlled Rectifier (SCR).
Encapsulated modules with electrically isolated base plate. Suitable for applications such as battery chargers, welders and plating equipment, regulated power supplies and temperature and speed control circuits.

MCC Series

APPROVALS : UL recognised component

Dual series thyristors

Current Source, Texas Instruments

Adjustable Current Source, Texas Instruments

LM134/LM334 – Adjustable Current Source
LM234 – Temperature Sensor with Analogue Current Source Output
REF200 – Dual high-accuracy 100μA fixed Current Source IC with additional current mirror